s,ttii -(lonau.cko\ i, dnc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistors telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 2SC2331 absolute maximum ratings(ta=25 ) symbol vcbo vceo vebo ic i cm ib pt tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current-peak base current total power dissipation junction temperature storage temperature conditions open emitter open base open collector ta=25: tc=25 value 100 100 7 2.0 4.0 1.0 1.5 15 150 -55-150 unit v v v a a a w b c e fig.1 simplified outline (to-220) and symbol nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information ftirnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. ni semi-conductors encourages customers to verify that datasheets are current before phicing orders.
characteristics tj=25 unless otherwise specified symbol vceo(sus) vcesat vsesat icbo iebo hpe-1 hpe-2 parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage collector cut-off current emitter cut-off current dc current gain dc current gain conditions lc=1.0a,lb=0.1a,l=1mh lc=1a; ib=0.1a ic=1a;ib=0.1a vcb=100v; ie=0 veb=5v; lc=0 lc=0.1a;vce=5v lc=1 a ; vce=5v min 100 40 40 typ. max 0.6 1.5 10 10 200 unit v v v ma ua switching times resistive load ton ts tf turn-on time storage time fall time 2.80 0.00 3.75 830 13.00 10.00 8.76 i j f p \ ??' ^/ \$ ?-t 30.00< 15so z6l3o 5 v j50 j n 0.5 ms ic=1.0aib1=-ib2=0.1a rl=50n;vcc!b50v 1'a ms oas 1 1.3s e rtau . 1.20 ^??*>v nr ' ij 5 80 r i j 2.60_ 0.5 ms .300+0.01 is ?~~ (wo^ - 0.45*0.01 ?
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